for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information general description the 1214GN-280 is an internally matched, common source, class ab, gan on sic hemt transistor capable of providing over 17db gain, 280 watts of pulsed rf output power at 300 s pulse width, 10% duty factor across the 1200 to 1400 mhz band. market application C 1214GN-280 is designed for l-band pulsed radar case outline 55-kr common source absolute maximum ratings maximum power dissipation device dissipation @ 25 ? c 600 w maximum voltage and current drain-source voltage (v dss ) 150 v gate-source voltage (v gs ) -8 to +0 v maximum temperatures storage temperature (t stg ) -55 to +125 ? c operating junction temperature +250 ? c electrical characteristics @ 25 ? c symbol characteristics test conditions min typ max units pout output power pout=2 80w, freq=1200,1300,1400 mhz 280 300 w gp power gain pout=280w, freq=1200,1300,1400 mhz 17 17.3 db ? d drain efficiency pout=280 w, freq=1200,1300,1400 mhz 47 55 % dr droop pout=280w, freq=1200,1300,1400 mhz 1.0 db vswr-t load mismatch tolerance pout=280w, freq= 1300mhz 3:1 ? jc thermal resistance pulse wi dth=300us, duty=10% 0.3 c/w ? bias condition: vdd=+60v, idq=50ma averag e current (vgs= -2.0 ~ -4.5v typical) ? functional characteristics @ 25 ? c i d(off) drain leakage current v gs = -8v, v d = 60v 10 ma i g(off) gate leakage current v gs = -8v, v d = 0v 8 ma bv dss drain-source breakdown voltage v gs =-8v, i d = 10ma 250 v export classification: ear-99 1214GN-280 280 watts - 60 volts, 300 ? s, 10% l-band radar 1200 - 1400 mhz downloaded from: http:///
for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information typical broad band performace data frequency pin (w) pout (w) id (a) rl (db) nd (%) g (db) droop (db) 1200 mhz 5.6 312 1.0 -9 53 17.45 0.5 1300 mhz 5.6 316 .96 -15 57 17.5 0.3 1400 mhz 5.6 302 .9 -17 58 17.2 0.2 1214GN-280 280 watts - 60 volts, 300 ? s, 10% l-band radar 1200 - 1400 mhz 1214gn \ 280 vdd ? = ? 60v, ? idq ? = ? 50ma, ? 300us ? @ ? 10% 0 50 100 150 200 250 300 350 23456 pin ? (w) pout ? (w) 16 18 20 22 24 26 1.2ghz 1.3ghz 1.4ghz downloaded from: http:///
for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information transistor impeda nce information note: z source is looking into the input circuit; load z is looking into t he output circuit. impedance data freq (ghz) zs zl 1.2 2.29 C j2.52 3.18 C j2.32 1.3 2.32 C j1.47 3.61 C j1.43 1.4 2.44 C j.40 4.29 C j.56 1214GN-280 280 watts - 60 volts, 300 ? s, 10% l-band radar 1200 - 1400mhz downloaded from: http:///
for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information test circuit diagram board material: roger duriod 60 06 @ 25 mil thic kness, er=6.15 1214GN-280 280 watts - 60 volts, 300 ? s, 10% l-band radar 1200 - 1400 mhz downloaded from: http:///
for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information 55-kr package dimension dimension min (mil) min (mm) max (mil) max (mm) a 370 9.40 372 9.44 b 498 12.65 500 12.7 c 700 17.78 702 17.83 d 830 21.08 832 21.13 e 1030 26.16 1032 26.21 f 101 2.56 102 2.59 g 151 3.84 152 3.86 h 385 9.78 387 9.83 i 130 3.30 132 3.35 j 003 .076 004 0.10 k 135 3.43 137 3.48 l 105 2.67 107 2.72 m 085 2.16 86 2.18 n 065 1.65 66 1.68 1214GN-280 280 watts - 60 volts, 300 ? s, 10% l-band radar 1200 - 1400 mhz downloaded from: http:///
for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information the information contained in the document is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitt ed, distributed or disclosed or used without the express duly signed written cons ent of microsemi if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply . this document and the information contained herein may not be modifi ed, by any person other than authorized personnel of microsemi. no license under any patent, copy right, trade secret or other intellectual property right i s granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, es toppels or otherwise. any license under such intellectual property ri ghts must be approved by microsemi in writing signed by an office r of microsemi. microsemi reserves the right to change the configuration, func tionality and performance of its products at anytime without any notice. this product has been subject to limited testing and s hould not be used in conjunction with life-support or other missi on- critical equipment or applications. microsemi assumes no liabilit y whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particu lar purpose, merchantability, or infringement of any patent, copyright or ot her intellectual property right. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp. revision history revision level / date para. affected description 0.1 / 18 january 2013 - initial preliminary release 1214GN-280 280 watts - 60 volts, 300 ? s, 10% l-band radar 1200 - 1400 mhz downloaded from: http:///
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